Artículos SCI

Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. Φ-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a–b YBCO planes rotated by 120° to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 °C is applied.

The precipitation processes in a Cu-1.0 at.%Co-0.5 at.%Ti (Cu-1.5 at.%Co2Ti) alloy were studied using differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and microhardeness measurements. The analysis of the calorimetric curves from room temperature to 900 K shows the presence of two exothermic reactions attributed to the formation of CoTi and Co2Ti particles in the copper matrix. On the basis of enthalpy calculations, it was found that the decomposition begins with the precipitation of CoTi, followed by the formation of Co2Ti particles. The activation energies calculated using the modified Kissinger method were lower than the ones corresponding to diffusion of cobalt and titanium in copper. Kinetic parameters were obtained by a convolution method based on the Johnson-Mehl-Avrami (JMA) formalism. The values obtained for the parameter n were indicative of a particle nucleation process from preexistent nuclei. Microhardness measurements and TEM micrographs confirmed the formation of the mentioned phases.